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Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

2012

We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.

DYNAMICSMaterials scienceAtmospheric escapeCondensed matter physicsExcitonGeneral Physics and AstronomyElectronRate equationThermal transferEPITAXYCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials SciencechemistrySTATESself assembled quantum dots rate equations model carrier escape propertiesQuantum dotQuantum dot laserLUMINESCENCEPHOTOLUMINESCENCE
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